Portions of the oxide layer are removed to substantially planarize the trench-filled oxide layer as the first polysilicon layer.

所述氧化层的部分被移除，以使所述沟槽填充的氧化层作为第一多晶硅层基本平面化。

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The first polysilicon layer also includes a void therein.

第一多晶硅层还包括在其中的空隙。

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A transistor may be formed with a first polysilicon layer covered by a dielectric.

晶体管可以形成为具有被电介质覆盖的第一多晶硅层。

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