single poly gate 单晶多晶栅
Dual Poly Gate implant 双多晶硅栅离子注入
dual poly gate 双多晶硅栅
poly gate depletion effect 多晶栅耗尽效应
poly si gate 多晶硅栅
One of the most important module improvement is the combination of new LOCOS process development with poly gate lithography process.
关键工艺模块之一是新的LOCOS开发与硅栅光刻工艺改善的结合。
The surfaces of poly-Si thin film and gate oxide of thin film transistors were passivated using N2O/NH3 plasma.
采用N2O和NH3等离子钝化技术对多晶硅薄膜表面和栅氧表面进行了钝化处理。
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