One of the most important module improvement is the combination of new LOCOS process development with poly gate lithography process.
关键工艺模块之一是新的LOCOS开发与硅栅光刻工艺改善的结合。
The surfaces of poly-Si thin film and gate oxide of thin film transistors were passivated using N2O/NH3 plasma.
采用N2O和NH3等离子钝化技术对多晶硅薄膜表面和栅氧表面进行了钝化处理。
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