The silicon thin films on glass substrate were prepared using microwave ECR plasma source enhanced magnetron sputtering.
利用微波ecr等离子体增强磁控溅射沉积技术在玻璃表面制备了硅膜。
The influence of negative pulse voltage applied directly to stainless steel samples on plasma characteristics has been found to be negligible, except sample sputtering.
直接施加于试样的脉冲负偏压对等离子体特性没有明显影响，但存在着一定的溅射作用。
Mercury used as a cathode sputtering inhibitor in DC plasma displays with a content up to 30 mg per display until 1 July 2010.
毫克每显示的直流等离子显示器中阴极溅射抑制剂中的汞含量。
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