Compared with a chemical doping, the plasma doping displays much higher doping speed and can improve the stability of conductive polymers.
与化学掺杂相比较,等离子体掺杂具有很高的掺杂速率,并可提高导电聚合物的稳定性。
Without doping, plasma enhanced chemical vapor deposition (PECVD) of silica films on si substrates with gas mixtures of SiH_4 and N_2O is considered.
以硅烷和氧化二氮作为反应气体,采用等离子体增强化学气相沉积(PECVD)技术,不使用掺杂,在单晶硅衬底上制备了用于平面光波导的二氧化硅薄膜。
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