inverse photo electric effect 反光电效应
inverse photo-electric effect 反光电效应
Inner photo- electric effect 内光电效应
primary photo-electric effect 初级光电效应
External photo-electric effect 外光电效应
photo-electric effect in solids 固体中的光电效应
infra-red photo-electric effect 红外光电效应
photo-piezo-electric effect 光压电效应
field-effect photo electric transistor 场效应光电晶体管
effect atomic photo-electric 原子光电效应
Without light illumination,the dark leakage current of the heterojunctions increases with the rise of annealing temperature. With illumination of 650 nm light,the best photoelectric effect is obtained from the sample annealed at 600 ℃.
在没有光照的条件下,异质结的漏电流随退火温度的增加而增大;用650 nm光照射样品时,600℃退火的样品表现出最明显的光电效应,而过高的退火温度会破坏ZnO/p-Si异质结的界面结构,使其光电流变小。
参考来源 - 退火对ZnO薄膜晶体结构和ZnO/pThe results showed that the coatings had photoelectric effect in the UV light. And they had the similar photocatalytic properties compared with the TiO_2 film.
与TiO_2薄膜相比较,两者具有相似的光电效应。
参考来源 - Zn·2,447,543篇论文数据，部分数据来源于NoteExpress
以上来源于: WordNet
N the ejection of electrons from a solid by an incident beam of sufficiently energetic electromagnetic radiation 光电效应
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