A new physical model for on-chip interconnect on high lossy substrate is proposed based on complex image theory and PEEC.
针对高损耗衬底，基于复镜像理论，结合部分元等效电路法，建立了一种新的片上互连线物理模型。
In this study, symbolic analysis is proposed to simulate the equivalent circuits of PEEC, as well as components and devices.
文中提出的用符号分析法模拟PEEC模型以及其它电路元器件，具有大大降低运算量等优点。
To do that, the integral definition of vector magnetic potential and the Lorentz gauge is used to expand the integral equation of the PEEC model.
为此它以矢量磁位的积分表达式和洛仑兹规范代替了矢量磁位和标量电位的积分表达式，对积分方程进行展开。
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