Total-dose irradiation effect of partially-depleted NMOS transistors with gate-all-around and H-gate structures fabricated on modified SIMOX was studied.

研究了在改性注氧隔离（SIMOX）材料上制备的具有环栅和H型栅结构的部分耗尽NMOS晶体管在三种不同偏置状态的总剂量辐照效应。

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In partially depleted SOI, the top layer is between 50- to 90-nm thick. Silicon under the channel is partially depleted of mobile charge.

在部分耗尽型SOI结构中，SOI中顶层硅层的厚度为50-90nm，因此沟道下方的硅层中仅有部分被耗尽层占据，由此可导致电荷在耗尽层以下的电中性区域中累积，造成所谓的浮体效应。

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