In the computations of 3d VLSI parasitic interconnect capacitance, it is very difficult to partition the boundary elements on a multi hole surface.
在3d VL SI互连寄生电容的边界元素法计算中，多孔平面的边界元划分是十分困难的问题。
The influence of parasitic interconnect capacitance is much in evidence with the progress of the semiconductor techniques and the increase of chip density and calculated speed.
随着半导体工艺的进步，芯片集成度和运算速度的提高，互连寄生效应的影响也日益明显。
The approximate function relationships are obtained by analyzing the impact of interconnect geometric parameters fluctuation on the interconnect parasitic parameters.
通过分析互连几何参数波动与互连寄生参数的关系，得到其近似的函数关系表达式。
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