In order to obtain good performance of RF SOC,it is important that passive components with low loss and low parasitic effect are made. In recent years,passive devices on SOI substrate have got considerable amount of research and gained some development.
为了实现性能良好的射频片上系统,近年来SOI衬底的高频特性及基于SOI衬底的可集成、低损耗、低寄生效应的无源器件研究越来越多。
参考来源 - 基于SOI衬底的共平面波导射频损耗特性研究In the layout design, we have considered such problems as the matching between the devices, noise coupling, parasitic effect, and so on.
版图设计中考虑了器件的匹配、噪声耦合、以及寄生影响等。
参考来源 - 一种应用在65纳米CMOS系统级芯片中的低压低功耗、高精度带隙基准源·2,447,543篇论文数据，部分数据来源于NoteExpress
The parasitic effect can be decreased by the numerical filtering.
通过数字滤波的方法可以减少寄生效应的影响。
Parasitic effects of packaging have significant effect on performance of rf ICs.
封装寄生效应对高频器件性能的影响越来越明显。
The high frequency parasitic effect of MOSFET is emphasis on, included gate resistance, substrate resistance, and parasitic capacitance.
重点讨论MOSFET的高频寄生参数，包括栅电阻、衬底电阻、寄生电容等。
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