The factors of MOS transistor in the saturation region are analyzed, the mismatch models are optimized, and the model parameter extraction is done by least squares curve fitting method.
通过分析MOS管在饱和区失配因素，优化MOS管失配模型，提出用最小二乘曲线拟合法进行相关模型参数提取。
The article introduces the development process of the complex transistor of high impedance, including the design of structure parameter, artwork layout and the development result.
本文介绍了高阻抗复合管的研制过程，包括结构多数的设计，工艺设计，以及研制结果。
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