三、导电高分子材料的导电机理 导电高分子材料的掺杂途径 氧化掺杂 (p-doping): 掺杂后的聚合物形成盐类，产生电流的原因并不 是碘离子或钠离子，而是共轭双键上的电子移动。
基于16个网页-相关网页
high p-doping p型高掺杂
p-doping mechanism 磷掺杂机理
p type doping p 型掺杂
p type doping 型掺杂
F and P co-doping 氟磷共掺杂
p-type doping window layer p型的掺杂窗口层
The results show that doping 1%( mass fraction, same as below) P to pure tin can improve the strength and stiffness, decrease the plasticity.
结果显示在纯锡中添加1%（质量分数，下同） P，能够提高强度、刚度，降低塑性；
In this paper, theories of ZnO film p-type doping are introduced in several aspects, including self-compensation effect, madelung energy, and thermodynamics.
本文分别从自补偿效应，马德隆能以及热力学等角度介绍了氧化锌薄膜的p型掺杂的理论研究。
Both P-type and N-type crystalline si have been doped using arsenic, phosphor and boron. The electrical and opto-electrical characteristics of the doping area are investigated.
型和N型两种硅单晶进行了砷、磷和硼的掺杂，并研究了掺杂区的电和光电特性。
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