氮气氛直拉硅中氧沉淀的研究 - 中南大学学报（自然科学版、英文版） 关键字: 直拉硅; 氧沉淀; 缺陷[gap=604]Key words: CZSi; oxygen precipitation; defect
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amount of oxygen precipitation 析出氧气量 ; 加工量
oxygen-precipitation method 氧化−沉淀法
In this paper, firstly, the effect of heavy boron-doping on oxygen precipitation was investigated.
本文首先系统研究了重掺硼硅片在不同温度下的氧沉淀行为。
参考来源 - 直拉重掺硼硅单晶中氧沉淀的研究A developed IG technique was suggested and the mechanism of the influence of As on oxygen precipitation formation in heavily As-doped silicon was discussed.
探索出一种改进的内吸除技术，并探讨了其增强重掺硅片中氧沉淀的机理。
参考来源 - 重掺砷硅单晶中氧沉淀及诱生缺陷的研究·2,447,543篇论文数据，部分数据来源于NoteExpress
Oxygen precipitation is an important subject of defect engineering for CZ silicon.
氧沉淀是直拉硅单晶缺陷工程的重要研究课题。
The polysilicon can enhance oxygen precipitation nucleating and growing, acting as the intrinsic gettering.
多晶硅能促进硅片内的氧沉淀成核和生长，起内吸杂作用。
It is believed that nitrogen complex irradiation defects to form complexes, which enhance oxygen precipitation.
这是辐照缺陷及其相关复合体对氧沉淀形核过程起了加速作用的结果。
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