Because the quantitative analysis of oxygen can't be done by general equipment, it is still lack of systematically investigation of precipitates and induced defects in heavily doped Cz-si.
但由于重掺硅中氧浓度定量测试受到方法限制，重掺硅单晶氧沉淀及其诱生缺陷至今未得到全面而深入地研究。
The results can be applied to the analysis of 3d face feature and design of oxygen mask and face-protecting equipment.
所获得的结果可用于分析面部三维形态特征，并为供氧面罩等面部防护装具的造型设计提供依据。
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