gate oxide [电子] 栅氧化层 ; 闸极氧化层 ; 以及氧化栅极 ; 门氧化物
field-oxide gate 场氧栅
gate oxide defect 栅氧化层缺陷
gate oxide integrity 栅极氧化层的完整性 ; 完整性 ; 门氧化层完整性
Gate oxide Furnace 门极氧化炉
thin gate oxide [电子] 薄栅氧化层
gate-oxide 栅氧
gate oxide leakage 栅氧化层泄漏
dual gate oxide 双栅氧 ; 提出了一种新的双栅氧
TDDB(time-dependent dielectric breakdown)is a key method to value the quality of thin gate oxide.
经时绝缘击穿（TDDB）是评价薄栅氧化层质量的重要方法。
The first important thin film from the thermal oxide group is the gate oxide layer under which a conducting channel can be formed between the source and the drain.
第一个重要的来自热氧化组薄膜是栅氧化层，在它之下，源和漏之间就能形成导电通道。
Hot-carrier enhanced TDDB effect of ultra-thin gate oxide is investigated by using substrate hot-carrier injection technique.
本文通过衬底热载流子注入技术，研究了热载流子增强的超薄栅氧化层TDDB效应。
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