A serial of technologies for oxide films growing, which is most fitful for the current etching and formation linkage line. The related mechanisms are also included.
研究了一系列与目前工业联动腐蚀、化成线具有良好兼容性的复合氧化膜生长技术，并对相关机制进行了详细研究。
The invention can improve the micro-loading effect while etching the grooves in the process manufacturing the stress metal oxide semiconductor device.
本发明可改善应变金属氧化物半导体器件的制造中刻蚀沟槽时的微负载效应。
The inventive profile allows for both the uniform growth of oxide layers by thermal oxidation, and substantially uniform etching rates of the structures.
该创造性的轮廓既允许通过热氧化来均匀地生长氧化物层，并且也允许结构的基本均匀的蚀刻速率。
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