Finally, our simulation result shows that conventional SOI SBSD-MOSFET can effectively suppress thermionic emission leakage current, but it still can not suppress tunneling leakage current.
最后，我们的模拟发现，普通soi结构SBSD - MOSFET能有效阻挡来自源结的热电子发射泄漏电流，但仍不能阻挡来自漏结的隧穿泄漏电流。
Simulation study shows that our method performs well not only in the probability as well.
数值模拟表明，我们的方法在构建的置信区间长度以及覆盖率方面有很好的结果。
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