NOR flash memory can typically be programmed a byte at a time, whereas NAND flash memory must be programmed in multi-byte bursts (typically, 512 bytes).

NOR flash内存通常一次可以编写一个字节，而NAND flash内存必须编写多个字节(通常为512字节)。

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In a NOR device, each block in the flash memory can be erased up to 100,000 times. NAND flash memories can be erased up to one million times.

在NOR设备中，flash内存中的每个块可被擦除100,000次，而在NAND flash内存中可达到一百万次。

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E3 flasher is a special device to help you programme NAND and NOR flash data.

E3的闪光是一个特殊的装置，以帮助您计划NAND和NOR闪存的数据。

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Micron Technology is one of the leading manufacturers and marketers of memory devices, primarily DRAM, NAND Flash and NOR products.

FORBES: What's Driving Micron's Outlook?

Micron Technology is a manufacturer and marketer of semiconductor devices, primarily dynamic random access memory for PCs and mobile devices, NAND Flash and NOR memory.

FORBES: Micron Could Hit $7.40 On DRAM Market Recovery

The company said improvements in margin from sales of NAND Flash and NOR Flash products were offset by slight declines in margins from sales of DRAM products.

FORBES: Micron FY Q1 Revenues Fall Short Of Street Expectations