... negative approach ==> 反证法 negative arc ==> 负弧 negative area ==> 负相区,负异常区,凹下部分 ...
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The plasma source ion implantation device consists of pulsed negative high voltage power, hot cathode arc discharge system, vacuum chamber and target stage, vacuum system and monitor system.
等离子体源离子注入装置由脉冲负高压源系统、热阴极弧放电系统、真空室及样品台、真空系统和监测系统等五部分组成。
Tetrahedral amorphous carbon (ta-C) films have been deposited on P-type (100) polished c-silicon wafer with different substrate negative bias by filtered cathodic vacuum arc technology.
采用过滤阴极真空电弧技术并施加一定的衬底负偏压,在P(100)单晶硅片上制备出四面体非晶碳薄膜。
Arc furnace is a typical unbalanced impact load. It pours a great deal of negative sequence component to power system, so measures shou ld be taken to compensate the arc furnace load.
电弧炉是一种严重的不对称冲击负载,它将产生大量的负序分量而污染电网,所以需要对其进行平衡化补偿。
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