In recent years, in the field of non-volatile memory research, metal nanocrystal memory with low-power, high-speed read and write characteristics and high reliability receives much attention.
金属纳米晶存储器件具有低功耗、高速读写特性及较高的可靠性，因此近年来在非易失存储器研究领域备受关注。
The invention also discloses a fabricating method for the nanocrystal floating gate memory with the multi-media composite tunneling layer.
本发明同时公开了一种多介质复合遂穿层的纳米晶浮栅存储器的制作方 法。
The invention simultaneously discloses a production method of the nanocrystal floating gate non-volatile memory with the double-layer tunneling dielectric structure.
同时公开 了一种双层隧穿介质结构的纳米晶浮栅非易失存储器的制作方法。
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