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The transmission spectrum of multiple quantum well structure with thickness-modulated dual-period was studied by means of transfer matrix method.
采用传输矩阵方法，研究了一维双周期厚度调制的多量子阱的透射谱。
The differences in the structures and properties of multiple quantum well between different areas on a wafer were achieved using selective partial disordering.
利用选择性部分无序技术获得了单片外延片上不同区域的多量子阱在结构与性质上的差异。
A multiple quantum well (MQW) structure for a light emitting diode and a method for fabricating a MQW structure for a light emitting diode are provided.
提供了一种用于发光二极管的多量子阱(MQW)结构以及用于制造用于发光二极管的MQW结构的方法。
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