Dishing problem of copper multilayer interconnection in ULSI was introduced, and the reasons and influencing factors were analyzed.

介绍了UL SI多层铜互连线中的碟形坑问题，对其产生的原因及影响因素进行了分析。

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Method for reducing metal, multilayer interconnection structure and manufacturing method for the same, and semiconductor device and manufacturing method for the same.

金属还原方法，多层互连结构及制法，半导体器件及制法。

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Finally the relationship between high - order interconnection and multilayer network architecture is discussed.

本文最后讨论了高阶连接和多层网络结构的关系。

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