To reduce bit cost in the same generation of process, multi-bit in one cell technology has been developed for flash memory.

为了在现有条件下进一步降低闪速存储器的单位成本，已开发了各种单管多位技术。

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Samsung's 128Gb NAND flash is based on a 3-bit multi-level-cell design and 10nm-class process technology.

ENGADGET: Samsung puts 128-gigabit 3-bit cell flash into production, plans to build more memory cards

Intel announced a new SATA interface enterprise solid state drive (SSD) that uses 25 nm multi-level cell flash memory (this is 2 bit per cell technology referred to as MLC).

FORBES: New Technology and Investment Opportunities at the 2011 Intel Developers Forum