Tunnel Recombination Junction 隧穿复合结 MTJ Magnetic Tunnel Junction 磁性隧道连接 magnetic tunnel junction 磁隧道结 ; 磁性隧道结 ; 隧道结 ..
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More particularly, the MTJ structure may be on the semiconductor substrate, and the digit line may be adjacent the magnetic tunnel junction structure.
更具体,MT J结构可以在半导体衬底上,以及数字线可以邻近磁隧道结结构。
A magnetic random access memory device may include a semiconductor substrate, a magnetic tunnel junction (MTJ) structure, a contact plug, and a digit line.
提供用于操作包括存储单元的磁随机存取存储器件的方法,该存储单元具有在衬底上的磁隧道结结构的。
The memory element includes a magnetic tunnel junction (MTJ) element and an electrode.
存储器组件包括一磁穿隧接 面(MTJ)组件与一电极。
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