The invention can greatly improve the quality and reliability of the MOS capacitor.
采用本发明可大大提高MOS电 容的质量和可靠性。
Moreover, we done the same experiment on the (110) orientation Si and discuss flat-band voltage shift of MOS capacitor under biaxial strain.
此外，我们也在(110)方向的矽基板上作了相同的实验，并且讨论其在双轴的伸展应力下金氧半电容的平带电压的移动情况。
The experimental results show that for the same MOS capacitor sample the obtained values of generation lifetime from varying association of voltage sweep rates are close each other.
实验结果表明，对于同一个MOS电容器样品，从不同电压扫描率组合得到的产生寿命值基本一致。
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