A method for fabricating a 3-d monolithic memory device.
一种用于制造3 - D单片存储装置的方法。
Additional levels of conductive rails and memory cell diodes are formed similarly to build the 3-d monolithic memory device.
类似地形成导电轨和存储单元二极管的附加层级,从而构建3 - D单片存储装置。
Two neuron cells for the negative weight and the associative memory storage suitable for monolithic implementation is introduced.
提出了实现负权值及存储联想矢量的两个开关电流单元电路;
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