modulation-doped heterostructure
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High electron mobility transistors (HEMT) is one of field effect transistors, which is made by modulation doped heterostructure technology and possess super high electron mobility.
高电子迁移率晶体管(HEMT)是利用异质结和调制掺杂技术制成的具有超高迁移率的场效应晶体管。
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