These hydrogen atoms bonded with the magnesium atoms that were supposed to promote hole mobility, preventing them from doing their jobs properly.
这些由镁原子环绕的氢原子应该是提升正电穴的动能的，但却阻碍了他们正常工作。
The main work is focused on models of hole scattering mechanisms and hole mobility which is related to the crystal orientations and stress of strained Si.
本文主要研究应变硅空穴各机制散射几率及空穴迁移率与晶向、应力的理论关系。
The simulation results show that both uniaxial compression and biaxial tension can enhance the hole mobility.
模拟结果显示：无论是单轴压应力还是双轴张应力，都使得空穴迁移率增大。
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