·2,447,543篇论文数据，部分数据来源于NoteExpress
This article reviews common technologies for mobility enhancement.
文章综述了常见的几种迁移率增强技术。
The formation mechanism, energy band, hole density-of-state effective mass of strained si have been analyzed first., then hole mobility enhancement mechanism is analyzed.
首先分析了应变硅形成机理、能带结构变化、空穴态密度有效质量，进而分析了空穴迁移率增强机理。
应用推荐