The photoluminescence emission of SnO_2 nanowires around 580 nm at room temperature can also be controlled accurately by Mo-doping,which is extremely sensitive to Mo ions and will disappear under the atomic ratio of 0.46%.
二氧化锡纳米线的室温光致发光谱表明,可以通过钼掺杂实现对580纳米附近发射峰强度的控制,该发射峰对钼掺杂浓度非常敏感,在钼掺杂原子比为0.46%将完全消失。
参考来源 - SnO·2,447,543篇论文数据，部分数据来源于NoteExpress
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