interfacial misfit strain 界面错配应变
coherent misfit strain 共格错合应变
lattice-misfit strain 晶格失配应变
initial misfit strain 初始失配应变
The roughness of each layer is also characterized, and it may be related to the misfit strain relaxation in film.
进一步研究表明方均粗糙度与薄膜的失配应变弛豫相关。
The analysis based on a nonlinear elasticity theory reveals that the small pressure coefficients mainly result from the changes of the misfit strain and the elastic constants with pressure.
基于非线性弹性理论的分析表明失配应变与弹性系数随压力的变化是大量子点压力系数小的主要原因之一。
The critical thickness is determined from the zero formation energy of a misfit dislocation. i. e. the amount of reduced mismatch strain energy equaling the amount of creased dislocation self energy.
利用位错形成能等于零(即错配应变能的降低等于位错自能)的条件，得到了外延生长薄膜的临界厚度。
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