The enhancement on formation of misfit dislocation is related to the incidence position of adatom.
原子入射对外延薄膜失配位错形成的诱发作用与原子入射位置有关。
参考来源 - 沉积原子入射对外延铝薄膜中失配位错形成的诱发作用研究Misfit strain energy (beyond critical thickness corresponding misfit) under thesame thin system have a crucial role to formation of misfit dislocation in the thinfilms.
同样条件下的薄膜体系，薄膜中失配应变能(超过了对应失配度下的临界厚度)对薄膜失配位错的形成起决定作用。
参考来源 - 外延薄膜晶体失配位错形成的动力学条件·2,447,543篇论文数据，部分数据来源于NoteExpress
The net stress is a driving force of misfit dislocation multiplication and is a very important factor for strained MQWs stability.
净应力是失配位错增殖的驱动力，是应变多量子阱稳定的重要判据。
In the case of considering the misfit dislocation, relaxed lattice mismatch, the radius of curvature and density of misfit dislocation were calculated.
在考虑存在失配位错的情况下，计算了驰豫晶格失配、曲率半径和失配位错密度。
The critical thickness is determined from the zero formation energy of a misfit dislocation. i. e. the amount of reduced mismatch strain energy equaling the amount of creased dislocation self energy.
利用位错形成能等于零(即错配应变能的降低等于位错自能)的条件，得到了外延生长薄膜的临界厚度。
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