The structure and fabrication of double-insulation layer tunnel junction(MIMIS) are introduced.
介绍了一种新型光电器件,即双绝缘层MIMIS隧道发光器件的结构和制备。
The structure, fabrication technology and light emission properties of double barrier MIMIS tunneling junction are discussed.
讨论了硅基双势垒金属绝缘层金属绝缘层半导体 (MIMIS)隧道发光结的结构、制备方法及发光特性。
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