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A polysilicon emitter RCA microwave transistor was fabricated to fit the power application for the first time.
首次采用多晶硅发射区RCA技术制备出微波功率晶体管。
The microwave transistor laser model is very accurate for predicting frequency-dependent electrical and optical properties.
微波晶体管激光模型可以非常准确的预测频变电和光的属性。
This paper presents a new circuit model for designing a microwave transistor amplifier, and gives a general optimum programing.
提出了一种新的设计微波晶体管放大器的电路模型，给出了通用优化设计程序。
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