The present invention further relates to a deep sub-micron MOS integrated circuit die comprising a thick-oxide transistor-based preamplifier.

本发明还涉及一种深亚微米mos集成电路管芯，包括基于厚氧化物晶体管的前置放大器。

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Moore's Law inevitably will drive transistor widths below the 0.18-micron diameters now requiring all these fancy light tricks.

FORBES: Trick of the Light

Moore's Law will inevitably drive transistor widths below the 0.18-micron diameters that now require all these fancy light tricks.

FORBES: Trick Of The Light