Microcrystalline-Silicon Technology 微晶硅技术
Microcrystalline Silicon TFT 微晶硅技术
microcrystalline silicon film 微晶硅薄膜的
hydrogenated microcrystalline silicon thin film 微晶硅薄膜
microcrystalline silicon films 微晶硅的
microcrystalline silicon deposited 微晶硅薄膜
intrinsic microcrystalline silicon 本征微晶硅材料
P-type window layer is one of the most important factors which influence the performance of amorphous silicon （a-Si） and microcrystalline silicon （μc-Si） solar cells.
P型窗口层是影响非晶硅（a-Si）和微晶硅（μc-Si）薄膜太阳电池整体性能的重要因素之一。
参考来源 - 新型高电导宽带隙太阳能电池宣窗口材料的研究·2,447,543篇论文数据，部分数据来源于NoteExpress
Series of microcrystalline silicon thin films were fabricated by VHF-PECVD at different substrate temperatures (Ts).
采用VHF-PECVD技术制备了不同衬底温度的微晶硅薄膜样品。
To realize high deposition rate is an important problem in low-cost industrialization of microcrystalline silicon solar cells.
实现高速沉积对于薄膜微晶硅太阳电池产业化降低成本是一个重要手段。
The electrical and structural properties of microcrystalline silicon thin film and solar cells fabricated by VHF-PECVD were studied.
本文对VHF PECVD制备的本征微晶硅薄膜和电池进行了电学特性和结构特性方面的测试分析研究。
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