The dielectric and interface characteristics of STO with a metal insulator semiconductor (MIS) structure were investigated.

研究了STO薄膜金属绝缘体半导体(MIS)结构的介电和界面特性。

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This paper presents a forward-bias capacitance measurement system based on HP 4274AL-C-R meter for extracting the parameters of interface states of metal-semiconductor contacts.

本文描述使用以阻抗测量仪为中心的正偏电容测量系统提取金属-半导体接触界面态参数的方法。

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