Considering the tunneling effect and the Schottky effect, the metal semiconductor contact is simulated by using self consistent ensemble Monte Carlo method.
运用自洽的蒙特卡罗方法模拟了肖特基接触的隧穿效应。
The resistance of the metal probe to semiconductor contact can be quite high.
金属探头与半导体接触时的电阻可能相当高。
A semiconductor device (10) has contact between the last interconnect layer (16) and the bond pad that includes a barrier metal (26) between the bond pad (28) and the last interconnect layer (16).
一种半导体器件(10)，具有在最后的互连层(16)和接合焊盘之间的接触，该接合焊盘包括接合焊盘(28)和最后的互连层(16)之间的阻挡金属(26)。
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