metal oxide semiconductor integrated circuit mos集成电路
MOSIC metal-oxide-semiconductor integrated circuit 金属氧化物半导体集成电路
complementary metal-oxide-semiconductor integrated circuit CMOS电路
double diffused metal-oxide-semiconductor integrated circuit DMOS电路
high Performance metal-oxide-semiconductor integrated circuit HMOS电路
metal-nitride-oxide semiconductor integrated circuit 金属
metal-oxide-semiconductor type integrated circuit 金属氧化物半导体集成电路
The present invention brings forward a method for determining leakage currents in integrated circuit and metal oxide semiconductor element.
本发明提出一种集成电路及金属氧化物半导体元件中判断漏电流的方法。
The Schottky diode and the method of making same same can meet the requirements of metal-oxide-semiconductor process and be suitable for integrated production of sub-micro IC also.
该肖特基二极管及其制造方法能够满足金属氧化物半导体工艺的需求，并适用于亚微米集成电路的集成生产。
A complementary metal oxide semiconductor (CMOS) readout integrated circuit (ROIC) for the sensitive material of vanadium dioxide (VO_2) was introduced.
介绍了一种针对二氧化钒敏感材料的CMOS读出电路(RO IC)。
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