The invention can improve the micro-loading effect while etching the grooves in the process manufacturing the stress metal oxide semiconductor device.

本发明可改善应变金属氧化物半导体器件的制造中刻蚀沟槽时的微负载效应。

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A semiconductor device may include at least one metal oxide field-effect transistor (MOSFET).

一种半导体器件，可以包括至少一个金属氧化物场效应晶体管(MOSFET)。

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Provided is a complementary metal oxide semiconductor (CMOS) device and a method of manufacturing the same.

本发明提供了一种互补金属氧化物半导体（CMOS）装置及其制造方法。

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Apart from the arrival of less pricey full-frame digital SLRs, the other recent development that has impressed your correspondent is the way imaging chips are migrating from CCD (charge-coupled device) technology to CMOS (complementary metal-oxide semiconductor), used widely in the computer industry.

ECONOMIST: A die-hard analog photographer goes digital