The dielectric and interface characteristics of STO with a metal insulator semiconductor (MIS) structure were investigated.
研究了STO薄膜金属绝缘体半导体(MIS)结构的介电和界面特性。
Its structure is the same as a conventional metal insulator semiconductor field effect transistor (MISFET).
它的结构与普通金属—绝缘体—半导体场效应晶体管(MISFET)基本相同。
The invention provides a semiconductor component and a method for manufacturing a metal-insulator-metal capacitor in a Mosaic structure.
本发明提供一半导体元件及制造镶嵌结构中的金属绝缘金属电容的方法。
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