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And with a good breakdown performance, MESFET can be widely used in high-voltage field.
具有较好的击穿特性会使其更广泛地应用于高压领域。
This method can effectively evaluate the quality of MESFET before the microwave characteristics of devices are measured.
该法可在MESFET进行微波噪声性能测试之前,有效地鉴别器件质量的优劣。
This paper discusses a switching model of GaAs MESFET. It is suitable for MMIC design with broad frequency characteristic.
提出了一种MESFET开关的模型——附加栅控开关模型,适用于MMIC电路的设计,具有很好的宽带微波特性。
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