one transistor memory 单晶体管单元存储器
single transistor memory cell 单晶体管存储单元
transistor driven core memory 晶体管驱动磁心存储器
single transistor memory [计] 单管单元存储器
transistor memory 晶体管存储器
TDCM Transistor Driven Core Memory 晶体管驱动磁心存储器
ferroelectric field effect transistor memory 铁电场效应晶体管存储器
The nonvolatile memory device may include a string selection transistor, a plurality of memory transistors, and a ground selection transistor between a bit line and a common source line.
所述非易失性存储装置可以包括在位线和共源线之间的串选择晶体管、多个存储晶体管和地选择晶体管。
The choice engineers face is thus between supplying continuous power to a transistor, so that it can retain its memory.
因此，工程师们面临的选择就是要么对晶体管提供一个持续的电源，让晶体管保持自己的记忆。
Due to the advantage of non-destruction read out, Ferroelectric Field Effect Transistor (FFET) is supposed to be the ideal potential memory device and has been widely investigated.
铁电场效应晶体管（FFET）存储器能够实现非破坏性读出，是一种比较理想的存储方式，因此从一开始就受到人们极大的关注。
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