The proposed structure circumvents this problem by creating non-volatile memory cells from standard CMOS transistors. Thus, no additional masking or processing steps are necessary.
这里提出的结构解决了这个问题，它利用标准CMOS晶体管来实现非易失性存储器，这样就不需要额外的掩膜或工艺步骤。
The acidity control problem of de-masking reaction in complexometric titration was presented theoretically in the paper, and simple calculation method was also provided.
从理论上对配位滴定时解蔽反应的酸度问题进行了探讨，并提出了简便的计算方法。
In view of the above, this paper USES selective masking smoothing to remove noise and linear gray transform method to solve the problem of gray uneven.
鉴于以上情况，本文选用了选择式掩模滤波对噪声进行去除，用线性灰度变换方法解决了灰度不均匀的问题。
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