masked multi-layer growth 多层掩模生长
To do this we simply used an adjustment layer with a "turbulent displace" filter applied, masked only where we needed.
为了做到这一步,我们简单使用了带有“剧烈置换”过滤器的修正层,只将我们需要的部分进行遮罩处理。
Part of the silicon layer was masked and dry etched with SF6 gas to allow connection of the current-collector to the outside circuit.
硅片的一部分经掩膜后进行SF6干法刻蚀,从而使集流器能够连接到外电路上。
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