It is considered that in the initial stage of film growth, the space reaction processes play an important role for the low-temperature crystallization of pc-Si film.
因此可以认为，在多晶硅薄膜生长的最初阶段，空间反应过程对低温晶化起重要作用。
We developed a new process for low temperature crystallization of amorphous silicon films, by metal induced crystallization of amorphous silicon films at low temperature.
介绍了一种非晶硅薄膜低温晶化的新工艺———金属诱导非晶硅薄膜低温晶化。
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