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Our results showed that the LNO thin films could be used as bottom electrodes for integrated ferroelectric thin film devices.
结果表明，制得的LNO薄膜可用作集成铁电薄膜器件的底电极。
The infrared absorption coefficient of LNO thin films is increased with increase of its thickness, and reduced with increase of the infrared wavelength.
LNO薄膜的红外吸收系数随其厚度的增加而增加，且随红外波长的增大而减小。
The LNO thin films annealed at lower temperature have (110) preferred orientation, while the films annealed at higher temperature have (100) preferred orientation.
发现在较低退火温度下得到(110)择优取向的LNO薄膜，较高退火温度下得到(100)择优取向的LNO薄膜。
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