Based on simulation, the characteristics and mechanisms of failure on a deep sub-micron grounded-gate NMOS (GGNMOS) are studied under TLP (transmission line pulse) stress.

对TLP(传输线脉冲)应力下深亚微米ggnmos器件的特性和失效机理进行了仿真研究。

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They knew the line was very much on the pulse of what modern women would want in their wardrobes seasonally.

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Any electrical or electronic device - including the grid's transformers - not shielded against this pulse would be, at best, taken temporarily off-line.

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