Provided is a method for manufacturing a semiconductor light emitting element, by which a sapphire wafer can be divided into chips accurately at an extremely high yield.

本发明提供一种半导体发光元件的制造方法，使蓝宝石晶片形成芯片时，能够以极高的成品率正确地形成芯片。

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Gallium nitride, or GaN, converts electrical impulses to light and is grown on the surface of wafers made from sapphire or silicon carbide.

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