Si-based light emission devices are the key to realize optoelectric integration in VLSI and MEMS.
为实现超大规模集成电路和微机电系统(MEMS)中的光电集成，硅基发光器件的实现至关重要。
参考来源 - 基于PECVD工艺的硅基光致和电致发光器件研制·2,447,543篇论文数据，部分数据来源于NoteExpress
The electrical potential, field and carrier density in emission layer of single layer organic light-emitting devices are numerically studied based on the trapped charge limited conduction theory.
以陷阱电荷限制传导理论为基础，用数值方法研究了单层有机电致发光器件发光层中电势、电场和载流子密度的空间分布。
The method to increase the intensity of the blue light emission from the diamond films devices is suggested.
提出了一种提高金刚石薄膜电致发光器件发光强度的方法。
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