Problems with high on-resistance that are seen in traditional vertical structure DMOSFET still appear in LDMOSFET and phenomena of turn-off delay and latch-up are seen in LIGBT as well.
传统垂直式dmosfet高导通电阻的缺点在LDMOSFET中依旧存在，而垂直式igbt关闭延迟和闩锁的现象，也在LIGBT中发生。
Controlled hole injection LIGBT (CI LIGBT) is proposed in the paper, which can effectively control the hole injection with high anode voltage, and its latch up free characteristics can be improved.
本文提出空穴注入控制型横向绝缘栅双极晶体管(CI LIGBT)，可有效控制高压下阳极区空穴注入，提高器件的抗闩锁性能。
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